1200V 150A IGBT PIM Module-Solid Power-DS-SPS150P12M3M4-S04030011 V1.0

IGBT, Inverter / IGBT,逆变器

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C

1200

V

连续集电极直流电流

Continuous DC collector current

IC

TC=100°C

150

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

300

A

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvj=175°C

887

W

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=150A,VGE=15V

Tvj=25°C Tvj=125°C

1.65

1.85

1.90

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=6mA, VCE=VGE, Tvj=25°C

5.6 6.3 7.0

V

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

2.5

Ω

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

10.6

nF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

0.54

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1200V, VGE=0V, Tvj=25°C

1.00

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

500

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

Tvj=25°C

Tvj=125°C

72

80

ns

上升时间(电感负载)

Rise time, inductive load

tr

Tvj=25°C

Tvj=125°C

74

78

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

IC=150A, VCE=600V

VGE=-15V…+15V

RGon=5.1Ω

RGoff=5.1Ω

Inductive Load

Tvj=25°C

Tvj=125°C

Tvj=25°C

Tvj=125°C

Tvj=25°C

Tvj=125°C

413

480

ns

下降时间(电感负载)

Fall time, inductive load

tf

56

60

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

17.2

24.8

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C

Tvj=125°C

12.4

18.6

mJ

短路数据

SC data

ISC

VGE=-15V…+15, VCC=600V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=25°C

650

A

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.169

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Diode, Inverter / 二极管,逆变器

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1200

V

连续正向直流电流

Continuous DC forward current

IF

150

A

正向重复峰值电流

Peak repetitive forward current

IFRM

tp=1ms

300

A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

IF=150A

Tvj=25°C

Tvj=125°C

Tvj=150°C

1.85

1.80 1.80

2.00

V

反向恢复峰值电流

Peak reverse recovery current

Irm

IF=150A

Tvj=25°C

Tvj=125°C

65

80

A

反向恢复电荷

Reverse recovery charge

Qrr

-diF/dtoff=1600A/µs VR = 600 V

Tvj=25°C

Tvj=125°C

12.4

24.5

µC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

VGE=-15V

Tvj=25°C

Tvj=125°C

3.6

7.3

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.30

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

IGBT, Brake Chopper / IGBT,刹车

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C, IC=1mA, VGE=0V

1200

V

连续集电极直流电流

Continuous DC collector current

IC

TC=100°C, Tvj=175°C

100

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

200

A

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvj=175°C

652

W

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=100A,VGE=15V

Tvj=25°C

Tvj=125°C

Tvj=150°C

1.65

1.95 2.05

2.00

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=3.3mA, VCE=10V, Tvj=25°C

5.0 5.7 6.5

V

栅极电荷

Gate charge

QG

VGE=-15V…+15V

0.90

µC

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

6.80

nF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

0.30

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1200V, VGE=0V, Tvj=25°C

1.00

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

500

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

Tvj=25°C Tvj=125°C

145

155

ns

上升时间(电感负载)

Rise time, inductive load

tr

Tvj=25°C Tvj=125°C

28

40

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

IC=100A, VCE=600V

VGE=-15V…+15V

RGon=1.6 Ω

RGoff=1.6Ω

Inductive Load

Tvj=25°C

Tvj=125°C

Tvj=25°C

Tvj=125°C

Tvj=25°C

Tvj=125°C

325

360

ns

下降时间(电感负载)

Fall time, inductive load

tf

110

170

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

4.9

7.2

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C Tvj=125°C

6.5

9.7

mJ

短路数据

SC data

ISC

VGE=-15V…+15, VCC=600V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=25°C

450

A

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.23

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Diode, Brake Chopper / 二极管,刹车

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1200

V

连续正向直流电流

Continuous DC forward current

IF

50

A

正向重复峰值电流

Peak repetitive forward current

IFRM

tp=1ms

100

A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

IF=50A

Tvj=25°C

Tvj=125°C

Tvj=150°C

1.85

1.80

1.80

V

反向恢复峰值电流

Peak reverse recovery current

Irr

IF=50A

Tvj=25°C

Tvj=125°C

7.00

11.2

A

反向恢复电荷

Reverse recovery charge

Qr

-diF/dtoff=2300A/µs VR = 600 V

Tvj=25°C

Tvj=125°C

80

85

µC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

VGE=-15V

Tvj=25°C

Tvj=125°C

2.8

4.9

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.68

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Diode, Rectifier / 二极管,整流

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1600

V

最大正向均方根电流(每芯片)

Maximum RMS forward current per chip

IFRMSM

TH = 100°C

150

A

最大整流器输出均方根电流

Maximum RMS current at rectifier output

IRMSM

TH = 100°C

150

A

正向浪涌电流

Surge forward current

IFSM

tp=10ms, Tvj=25°C, sin180°

1600

A

I2t-值

I²t-value

I2t

tp=10ms, Tvj=25°C, sin180°

13000

A2S

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

Tvj=150°C, IF=100A

1.0

V

反向电流

Reverse current

IR

Tvj=125°C, VR=1600V

2.0

mA

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.28

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Module / 模块

Item

Symbol

Conditions

Value

Unit

s

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

2.5

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

10

mm

电气间隙

Clearance

7.5

mm

相对电痕指数

Comperative tracking index

CTI

> 200

Item Symbol Conditions Min. Typ. Max. Units

杂散电感,模块

Stray inductance module

LsCE

25

nH

模块引脚电阻, 端子-芯片

Module Lead Resistance ,Terminals-Chip

RCC’+EE’ TH=25°C,每个开关/perswitch

1.1

mΩ

储存温度

Storage temperature

Tstg

-40 125

°C

模块安装的安装扭距

Mounting torque for module mounting

M

3.00 6.00

Nm

重量

Weight

G

300

g