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1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

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1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

Model Number : SPS300MB12G6S

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Solid Power-DS-SPS300MB12G6S-S04310004

1200V 300A SiC MOSFET Half Bridge Module

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

Features:

  • High Frequency Switching application
  • Zero reverse recovery current from diode
  • Zero turn-off tail current from MOSFET
  • Ultra low loss
  • Ease of Paralleling

Typical Applications:

  • Induction Heating
  • Solar and Wind Inverters
  • DC/DC Converters
  • Battery Chargers

MOSFET

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

漏极－源极电压

Drain-source voltage

VDSS

Tvj=25°C

1200

V

连续漏极直流电流

Continuous DC drain current

ID

VGS=20V, TC=25°C, Tvjmax=175°C

VGS=20V, TC=85°C, Tvjmax=175°C

400

300

A

脉冲漏极电流

Pulsed drain current

ID pulse

Pulse width tp limited by Tvjmax

1200

A

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvjmax=175°C

1153

W

栅极峰值电压

Maximum gate-source voltage

VGSS

-10/25

V

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

漏极－源极通态电阻

Drain-source on resistance

RDS( on)

ID=300A,VGS=20V

Tvj=25°C

Tvj=125°C

Tvj=150°C

4.0

5.4 6.0

5.6

mΩ

mΩ

mΩ

栅极阈值电压

Gate threshold voltage

VGS(th)

IC=90mA, VCE=VGE, Tvj=25°C

IC=90mA, VCE=VGE, Tvj=150°C

1.9

2.4

1.6

4.0

V

跨导

Transconductance

gfs

VDS = 20 V, IDS = 300 A, Tvj=25°C

VDS = 20 V, IDS = 300 A, Tvj=150°C

211

186

S

栅极电荷

Gate charge

QG

VGE=-5V…+20V

1170

nC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

2.0

Ω

输入电容

Input capacitance

Cies

f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V

25.2

nF

输出电容

Output capacitance

Coes

f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V

1500

pF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz,Tvj=25°C,VDS=1000V, VAC=25mV, VGE=0V

96

pF

零栅电压漏极电流

Zero gate voltage drain current

IDSS

VDS=1200V, VGS=0V, Tvj=25°C

300

μA

栅极-源极漏电流

Gate-source leakage current

IGSS

VDS=0V, VGS=20V, Tvj=25°C

100

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

Tvj=25°C Tvj=125°C Tvj=150°C

76

66

66

ns

ns

ns

上升时间(电感负载)

Rise time, inductive load

tr

Tvj=25°C Tvj=125°C Tvj=150°C

62

56

56

ns

ns

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

ID=300A, VDS=600V

VGS=-5/20V

RGon=2.5Ω

Tvj=25°C

Tvj=125°C

Tvj=150°C

308

342

342

ns

ns

ns

下降时间(电感负载)

Fall time, inductive load

tf

RGoff=2.5Ω

Lσ = 56 nH

Inductive Load,

Tvj=25°C

Tvj=125°C

Tvj=150°C

94

92

92

ns

ns

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

Tvj=25°C Tvj=125°C Tvj=150°C

5.55

4.35

4.35

mJ

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C Tvj=125°C Tvj=150°C

12.10

12.35

12.35

mJ

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per MOSFET / 每个 MOSFET

0.12

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Diode /二极管

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

连续正向直流电流

Continuous diode forward current

IF

VGS = -5 V, TC = 25 ˚C

400

A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VSD

IF=300A, VGS=0V

Tvj=25°C Tvj=150°C

1.60

2.00

1.80

V

V

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.13

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Module / 模块

Item

Symbol

Conditions

Value

Units

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

2.5

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

29.0

23.0

mm

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

23.0

11.0

mm

相对电痕指数

Comparative tracking index

CTI

> 400

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

20

nH

模块引线电阻,端子-芯片

Module lead resistance, terminals - chip

RCC’+EE’

TC=25°C

0.465

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭矩

Mounting torque for module mounting

M5

2.50

5.00

Nm

端子联接扭矩

Terminal connection torque

M6

3.00

5.00

Nm

重量

Weight

G

300

g

MOSFET MOSFET

Output characteristic MOSFET (typical) Output characteristic MOSFET (typical)

IC=f (VCE) IC=f(VCE)

Tvj=25°C Tvj=150°C

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004


Normalized Drain-source on resistance (typical) Normalized Drain-source on resistance (typical)

RDSon(P.U.)=f(Tvj) RDSon=f(IDS)

IDS=120A VGS=20V VGS=20V

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

Drain-source on resistance (typical) Threshold Voltage (typical)

RDSon=f(Tvj) VDS(th)=f(Tvj)

IDS=120A VDS=VGS, IDS=30mA

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

MOSFET

Transfer characteristic MOSFET (typical) Forward characteristic of Diode (typical)

IDS=f(VGS) IDS=f(VDS)

VDS=20V Tvj=25°C

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

Forward characteristic of Diode (typical) characteristic of 3rd Quadrant (typical)

IDS=f(VDS) IDS=f(VDS)

Tvj=150°C Tvj=25°C

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

MOSFET

characteristic of 3rd Quadrant (typical) Gate charge characteristic MOSFET (typical)

IDS=f(VDS) VGS=f(QG)

Tvj=150°C VDS=800V, IDS=120A, Tvj=25°C

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

MOSFET MOSFET

Capacity characteristic MOSFET(typical) Switching losses MOSFET (typical)

C=f(VDS) E=f(IC)

VGS=0V, Tvj=25°C , f=1MHz VGE=-5/20V, RG=2.5 Ω, VCE=600V

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

MOSFET MOSFET

Switching losses MOSFET (typical) Transient thermal impedance MOSFET

E=f (RG) ZthJC=f (t)

VGE=-5/20V, IC=120A, VCE=600V

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

Transient thermal impedance Diode

ZthJC=f (t)

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

The "1200V 300A SiC MOSFET Half Bridge Module" integrates two Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) in a half-bridge configuration. Designed for high-power applications, it provides precise control over voltage (1200V) and current (300A), with advantages such as improved efficiency and performance in industrial settings. Effective cooling is crucial for reliable operation, and detailed specifications can be found in the manufacturer's datasheet.

Circuit diagram headline

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

Package outlines

1200V 300A SiC MOSFET Half Bridge Module Semiconductor DS-SPS300MB12G6S-S04310004

mm


Product Tags:

SiC MOSFET Half Bridge Module

      

Semiconductor Half Bridge Module

      

1200V 300A Sic MOSFET Module

      
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