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White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

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White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

Model Number : SPS300B17G6R8

Current Rating : 150A

Gate-Emitter Leakage Current : ±100nA

Gate-Emitter Threshold Voltage : 5V

Maximum Collector Current : 300A

Maximum Collector-Emitter Voltage : 1200V

Maximum Junction Temperature : 150°C

Maximum Power Dissipation : 500W

Mounting Style : Screw

Operating Temperature Range : -40°C to 125°C

Package Type : 62mm

Product Type : Power Semiconductor Module

Switching Frequency : 20kHz

Thermal Resistance : 0.1°C/W

Voltage Rating : 600V

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Solid Power-DS-SPS300B17G6R8-S04020024 V1.0

1700V 300A IGBT Half Bridge Module

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

Features:

□ 1700V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

Typical Applications:

□ Motor/Servo Drives

□ High Power Converters

□ UPS

□ Photovoltaic

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		29.0			mm
	dCreep	terminal to terminal		23.0
Clearance	dClear	terminal to heatsink		23.0			mm
	dClear	terminal to terminal		11.0
Comparative tracking index	CTI			＞400

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.70		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M6			3.0		6.0	Nm
Terminal connection torque	M6			2.5		5.0	Nm
Weight	G				320		g

IGBT Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1700	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	500	A
Continuous DC collector current	I_C		T_C=100℃	300	A
Pulsed collector current,tp limited by T_jmax	ICpulse			600	A
Power dissipation	Ptot			1500	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=300A, V_GE=15V	T_vj=25℃		1.70	2.00	V
			T_vj=125℃		1.95
			T_vj=150℃		2.00
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=12mA		5.1	5.9	6.6	V
Collector-emitter cut-off current	ICES	V_CE=1700V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1700V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=900V, I_C=300A , V_GE=±15V			1.6		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			25.0		nF
Output Capacitance	Coes				1.4
Reverse Transfer Capacitance	Cres				0.4
Internal gate resistor	RGint	T_vj=25℃			3.5		Ω
Turn-on delay time,inductive load	td(on)	V_CC=900V,I_C=300A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		185		ns
			T_vj=125℃		220		ns
			T_vj=150℃		230		ns
Rise Time,inductive load	t_r		T_vj=25℃		76		ns
			T_vj=125℃		92		ns
			T_vj=150℃		96		ns
Turn-off delay time,inductive load	td(off)	V_CC=900V,I_C=300A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		550		ns
			T_vj=125℃		665		ns
			T_vj=150℃		695		ns
Fall time,inductive load	t_f		T_vj=25℃		390		ns
			T_vj=125℃		610		ns
			T_vj=150℃		675		ns
Turn-on energy loss per pulse	Eon	V_CC=900V,I_C=300A R_G=3.3Ω, V_GE=±15V	T_vj=25℃		44.7		mJ
			T_vj=125℃		73.2		mJ
			T_vj=150℃		84.6		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		68.5		mJ
			T_vj=125℃		94.7		mJ
			T_vj=150℃		102.9		mJ
SC data	ISC	V_GE≤15V, V_CC=900V	tp≤10µs T_vj=150℃			950	A
IGBT thermal resistance,junction-case	RthJC					0.10	K /W
Operating Temperature	TJop			-40		175	℃

Diode Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1700	V
Continuous DC forward current	I_F		T_C=25℃	300	A
Continuous DC forward current	I_F		T_C=100℃	170
Diode pulsed current,tp limited by T_Jmax	IFpulse			600

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=300A , V_GE=0V	T_vj=25℃		2.45	2.80	V
			T_vj=125℃		2.65
			T_vj=150℃		2.65
Reverse recovery time	trr	I_F=300A dI_F/dt=-4000A/μs (T_vj=150°C) V_R=900V, V_GE=-15V	T_vj=25℃		160		ns
			T_vj=125℃		230
			T_vj=150℃		270
Peak reverse recovery current	IRRM		T_vj=25℃		380		A
			T_vj=125℃		400
			T_vj=150℃		415
Reverse recovery charge	QRR		T_vj=25℃		61		µC
			T_vj=125℃		104
			T_vj=150℃		123
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		29.7		mJ
			T_vj=125℃		53.6
			T_vj=150℃		63.4
Diode thermal resistance,junction-case	RthJCD					0.20	K /W
Operating Temperature	TJop			-40		175	℃

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE)

T_vj= 150°C

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 300A, V_CE = 900V

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 3.3Ω , V_CE = 900V V_GE = ±15V, R_Goff = 3.3Ω, T_vj = 150°C

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 300A, V_CE = 900V

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

IGBT

IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 300A, V_CE = 900V R_G = 3.3Ω, V_CE = 900V

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

Diode transient thermal impedance as a function of pulse width

Zth(j-c) = f (t)

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

The "1700V 300A IGBT Half Bridge Module" integrates two Insulated Gate Bipolar Transistors (IGBTs) in a half-bridge configuration. It's designed for high-power applications, offering precise control over voltage (1700V) and current (300A). Effective cooling is crucial, and detailed specifications can be found in the manufacturer's datasheet.

Circuit diagram headline

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

Package outlines

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

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White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0 Images

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White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0

IGBT Modules 62mm White

Electronic Component IGBT Modules 62mm

White IGBT Modules

White IGBT Modules 62mm Electronic Component DS-SPS300B17G6R8-S04020024 V1.0 Images