75A 1200V IGBT Half Bridge Module Solid Power-DS-SPS150B17G3-S04010005

IGBT, Inverter

Maximum Rated Values

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C

1700

V

连续集电极直流电流

Continuous DC collector current

IC

150

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

300

A

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvj=175°C

880

W

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

最高结温

Maximum junction temperature

Tvj,max

175

°C

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=150A,VGE=15V

Tvj=25°C Tvj=125°C Tvj=150°C

1.67

1.90 1.96

1.90

V

V

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=17mA, VCE=VGE, Tvj=25°C

5.0 6.0 6.8

V

栅极电荷

Gate charge

QG

VGE=-15V…+15V

0.86

uC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

7.2

Ω

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

12.6

nF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=10V, VGE=0V

0.20

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1700V, VGE=0V, Tvj=25°C

3.00

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

400

nA

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

Tvj=25°C Tvj=125°C Tvj=150°C

326

339

345

ns

ns

ns

上升时间(电感负载)

Rise time, inductive load

tr

Tvj=25°C Tvj=125°C Tvj=150°C

106

118

126

ns

ns

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

IC=150A, VCE=900V

VGE=±15V

RGon=5Ω

RGoff=5Ω

Inductive Load,

Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C

Tvj=150°C

165

189

213

ns

ns

ns

下降时间(电感负载)

Fall time, inductive load

tf

757

924

950

ns

ns

ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

Tvj=25°C Tvj=125°C Tvj=150°C

47.1

58.9

63.7

mJ

mJ

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

Tvj=25°C Tvj=125°C Tvj=150°C

31.2

39.9

42.5

mJ

mJ

短路数据

SC data

ISC

VGE≤15V, VCC=1000V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C

600

A

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.17

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Diode, Inverter / 二极管,逆变器

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1700

V

连续正向直流电流

Continuous DC forward current

IF

150

A

正向重复峰值电流

Peak repetitive forward current

IFRM

tp=1ms

300

A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

IF=150A

Tvj=25°C

Tvj=125°C

Tvj=150°C

1.92

2.11 2.09

2.30

V

V

V

反向恢复峰值电流

Peak reverse recovery current

IRM

IF=150A

-diF/dtoff=2000A/µs

VR =900 V

VGE=-15V

Tvj=25°C 98

Tvj=125°C 119

Tvj=150°C 119

A

A

A

恢复电荷

Recovery charge

Qr

Tvj=25°C

Tvj=125°C

Tvj=150°C

21.4

36.7

42.0

uC

uC

uC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

Tvj=25°C

Tvj=125°C

Tvj=150°C

10.6

19.5

21.9

mJ

mJ

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.30

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Module / 模块

Item

Symbol

Conditions

Value

Units

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

4.0

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Cree page distance

端子-散热片 / terminal to heat sink

端子-端子/terminal to terminal

17.0

20.0

mm

电气间隙

Clearance

端子-散热片 / terminal to heat sink

端子-端子/terminal to terminal

17.0

9.5

mm

相对电痕指数

Comparative tracking index

CTI

> 200

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

30

nH

模块引脚电阻,端子-芯片

Module Lead Resistance ,Terminals-Chip

RCC’+EE’

RAA’+CC

0.65

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭距

Mounting torque for module mounting

M

M6

3.00

5.00

Nm

模块安装的安装扭距

Mounting torque for module mounting

M

M5

2.50

5.00

Nm

重量

Weight

G

160

g